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 SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1163
DESCRIPTION *With TO-3PL package *Complement to type 2SD1718 *Excellent linearity of hFE *Wide area of safe operation (ASO) *High transition frequency fT APPLICATIONS *For high power amplifier applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PL) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Open emitter Open base Open collector CONDITIONS VALUE -180 -180 -5 -15 -25 3.5 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 150 150 -55~150 W UNIT V V V A A
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-10A ;IB=-1A IC=-8A ; VCE=-5V VCB=-180V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IC=-8A ; VCE=-5V IC=-0.5A ; VCE=-5V f=1MHz;VCB=-10V 20 60 20 20 230 MIN
2SB1163
SYMBOL VCEsat VBE ICBO IEBO hFE-1 hFE-2 hFE-3 fT COB
TYP.
MAX -2.5 -1.8 -50 -50
UNIT V V A A
200
MHz pF
hFE-2 classifications Q 60-100 S 80-160 P 100-200
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1163
Fig.2 Outline dimensions (unindicated tolerance:0.50 mm)
3


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